| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -35.0 V |
| Current Rating | -2.00 A |
| Case/Package | TSOP |
| Halogen Free Status | Halogen Free |
| Polarity | PNP |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
Implement this versatile PNP NSS35200MR6T1G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 35 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
ON Semiconductor
6 Pages / 0.06 MByte
ON Semiconductor
6 Pages / 0.11 MByte
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