| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 200 mA |
| Case/Package | SOT-363 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 45V |
| Continuous Collector Current | 0.2A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
Use this versatile NPN MBT6429DW1T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
5 Pages / 0.21 MByte
ON Semiconductor
36 Pages / 0.15 MByte
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