TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 40.0 V |
Current Rating | 600 mA |
Case/Package | SOT-363 |
Halogen Free Status | Halogen Free |
Polarity | NPN, N-Channel |
Breakdown Voltage (Collector to Emitter) | 40V |
Continuous Collector Current | 0.6A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape |
Use this versatile NPN MBT2222ADW1T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
3 Pages / 0.05 MByte
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Trans GP BJT NPN 40V 0.6A 150mW 6Pin SOT-363 T/R
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