| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 3.90 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 59.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Input Capacitance | 2.54 nF |
| Gate Charge | 46.0 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 3.90 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The FDS2672 is a single N-channel MOSFET produced using Fairchild Semiconductor"s advanced UItraFET Trench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
Fairchild
11 Pages / 0.15 MByte
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6 Pages / 0.39 MByte
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27 Pages / 1.02 MByte
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1 Pages / 0.14 MByte
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