| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
This IXYH40N90C3D1 IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 500000 mW. It is made in a single configuration. This device is made with xpt technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
IXYS Semiconductor
7 Pages / 0.18 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 900V 105A 600000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 900V 90A 500000mW 3Pin(3+Tab) TO-247AD
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
