| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 3.00 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 4.50 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Drain to Source Voltage (Vds) | 1.20 kV |
| Continuous Drain Current (Ids) | 3.00 A |
| Rise Time | 35.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk, Tube |
The IXTP3N120 is a high voltage N-channel enhancement-mode Power MOSFET features avalanche rated and rated for unclamped inductive load switching (UIS).
● High dV/dt
● International standard package
● Low RDS (ON)
● UL94V-0 Flammability rating
● Easy to mount
● Space savings
● High power density
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