| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 64A |
The IRL3103PBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
Infineon
9 Pages / 0.18 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
IRF
Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)
International Rectifier
Trans MOSFET N-CH 30V 64A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans MOSFET N-CH 30V 64A 3Pin(2+Tab) D2PAK
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