| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
This powerful and secure IXGH2N250 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 32000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
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Trans IGBT Chip N-CH 1200V 50A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 50A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-247AD
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