TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220AB |
Polarity | N-Channel |
Rise Time | 16.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
The IRGB15B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and ultra-soft diode reverse recovery characteristics.
● Low diode VF
● Square RBSOA
● Positive VCE (on) temperature coefficient
● Rugged transient performance
● Low EMI
● Excellent current sharing in parallel operation
● 10µs Short-circuit capability
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