| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 80.0 A |
| Case/Package | SOT-227-4 |
| Drain to Source Resistance (on) (Rds) | 55.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 780 W |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 70.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bulk |
| Weight | 36.0 mg |
The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
● Fast intrinsic rectifier
● High dv/dt rating
● Rugged polysilicon gate cell structure
● Easy to mount
● Space savings
● High power density
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4 Pages / 0.55 MByte
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