| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 80V |
| Continuous Drain Current (Ids) | 39A |
The IRLR2908TRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
● Advanced process technology
● Ultra-low ON-resistance
● Dynamic dV/dt rating
● Repetitive avalanche allowed up to Tjmax
● Logic level
Infineon
11 Pages / 0.32 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.06 MByte
International Rectifier
Trans MOSFET N-CH 80V 39A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans MOSFET N-CH 80V 39A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 80V 39A 3Pin(2+Tab) DPAK T/R
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