| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Polarity | N-Channel |
| Power Dissipation | 625 W |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 70.0 A |
| Isolation Voltage | 2.50 kV |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IXFL100N50P is a PolarHV™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features silicon chip on direct-copper-bond substrate and high power density.
● Avalanche rating
● International standard isolated package
● High power dissipation
● Isolated mounting surface
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount
● Space saving
IXYS Semiconductor
8 Pages / 0.57 MByte
IXYS Semiconductor
5 Pages / 0.2 MByte
IXYS Semiconductor
Single N-Channel 500V 625W 240NC Through Hole Power Mosfet - ISOPLUS264
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