| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 75.0 V |
| Current Rating | 75.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 11.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 137 W |
| Input Capacitance | 4.47 nF |
| Gate Charge | 104 nC |
| Drain to Source Voltage (Vds) | 75.0 V |
| Breakdown Voltage (Drain to Source) | 75.0 V |
| Continuous Drain Current (Ids) | 75.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FDP75N08A is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● Fast switching
● Improved dV/dt capability
● 145nC Typical low gate charge
● 86pF Typical low Crss
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