TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 48.0 A |
Case/Package | TO-264 |
Drain to Source Resistance (on) (Rds) | 135 mΩ |
Polarity | N-Channel |
Power Dissipation | 830 W |
Input Capacitance | 8.86 nF |
Gate Charge | 150 nC |
Drain to Source Voltage (Vds) | 600 V |
Breakdown Voltage (Drain to Source) | 600 V |
Continuous Drain Current (Ids) | 48.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
The IXFK48N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● International standard package
● Unclamped inductive switching (UIS) rated
● Low package inductance
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
0.21 MByte
IXYS Semiconductor
4 Pages / 0.21 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
Single N-Channel 600V 830W 150NC Through Hole Power Mosfet - TO-264
IXYS Semiconductor
MOSFET N-CH 600V 48A TO-264
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.