| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 24.0 A |
| Case/Package | TO-264 |
| Drain to Source Resistance (on) (Rds) | 390 mΩ |
| Polarity | N-CH |
| Power Dissipation | 560 W |
| Drain to Source Voltage (Vds) | 1.00 kV |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 35.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation"s IXFK24N100 power MOSFET can provide a solution. Its maximum power dissipation is 560000 mW. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
IXYS Semiconductor
4 Pages / 0.13 MByte
IXYS Semiconductor
Trans MOSFET N-CH 800V 24A 3Pin(3+Tab) TO-264
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