| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 20.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 420 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 360 W |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 27.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bulk |
| Weight | 6.00 g |
The IXFH20N80Q is a Q-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
● Low RDS (ON) and QG
● Avalanche energy and current rated
● UL94V-0 Flammability rating
● High dV/dt and low Qg
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
2 Pages / 0.14 MByte
IXYS Semiconductor
Trans MOSFET N-CH 800V 20A 3Pin(3+Tab) TO-247
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