TYPE | DESCRIPTION |
---|
Supply Voltage (DC) | 10.0 V (min) |
Case/Package | SOIC |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
The IRS21850SPBF is a high voltage high speed power MOSFET and IGBT single High-side Gate Driver IC with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The floating logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic and can be operated up to 600V above the ground. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration, which operates up to 600V.
● Under-voltage lockout for VBS and VCC
● Tolerant to negative transient voltage
● Matched propagation delays for all channels
● 3.3 and 5V Input logic compatible
●ESD sensitive device, take proper precaution while handling the device.
Infineon
20 Pages / 0.33 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
15 Pages / 0.14 MByte
Infineon
Infineon IRS21850SPBF, MOSFET Power Driver, 4A, 10 → 20V, Non-Inverting, 8Pin SOIC
International Rectifier
Driver 600V 1Out Hi Side Non-Inv 8Pin SOIC T/R
Infineon
MOSFET DRVR 600V 1Out Hi Side Non-Inv 8Pin SOIC T/R
International Rectifier
Driver 600V 1Out Hi Side Non-Inv 8Pin SOIC T/R
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