| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | UB |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 140V |
| Continuous Collector Current | 1A |
Microsemi has the solution to your circuit"s high-voltage requirements with their PNP 2N3637UB general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
Microsemi
5 Pages / 0.16 MByte
Multicomp
Bipolar (BJT) Single Transistor, PNP, -175V, 200MHz, 5W, 1A, 50 hFE
Microsemi
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