Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
●Surface Mount (IRLR120N)
●Straight Lead (IRLU120N)
●Advanced Process Technology
●Fast Switching
●Fully Avalanche Rated
International Rectifier
0.17 MByte
International Rectifier
(IRLR120 / IRLU120) HEXFET Power MOSFET
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; I-Pak (TO-251AA); PD 48W
Vishay Siliconix
MOSFET N-CH 100V 7.7A I-PAK
International Rectifier
MOSFET N-CH 100V 10A I-PAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(3+Tab) IPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
