Advanced Power MOSFET
●FEATURES
●♦Logic-Level Gate Drive
●♦Avalanche Rugged Technology
●♦Rugged Gate Oxide Technology
●♦Lower Input Capacitance
●♦Improved Gate Charge
●♦Extended Safe Operating Area
●♦Lower Leakage Current: 10µA (Max.) @ VDS= 100V
●♦Lower RDS(ON): 0.336Ω(Typ.)
International Rectifier
(IRLR120 / IRLU120) HEXFET Power MOSFET
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; I-Pak (TO-251AA); PD 48W
Vishay Siliconix
MOSFET N-CH 100V 7.7A I-PAK
International Rectifier
MOSFET N-CH 100V 10A I-PAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(3+Tab) IPAK
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