| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Power Dissipation | 140 W |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 63A |
The IRLR3110ZPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This features combines to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.
● Fully avalanche rated
● Advanced process technology
● Ultra low on resistance
● Fast switching
Infineon
11 Pages / 0.3 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
Trans MOSFET N-CH 100V 63A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans MOSFET N-CH 100V 63A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 100V 63A 3Pin(2+Tab) DPAK T/R
International Rectifier
100V HEXFET Power MOSFET in a D-Pak package
International Rectifier
Trans MOSFET N-CH 100V 63A 3Pin(2+Tab) DPAK T/R
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