| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 11A |
The IRFR9024NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
● Advanced process technology
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
Infineon
11 Pages / 1.35 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.15 MByte
Vishay Siliconix
MOSFET P-CH 60V 8.8A DPAK
Vishay Semiconductor
Trans MOSFET P-CH 60V 8.8A 3Pin(2+Tab) DPAK
IRF
Power MOSFET(Vdss=-60V, Rds(on)=0.28Ω, Id=-8.8A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.175Ω; ID -11A; D-Pak (TO-252AA); PD 38W
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.175Ω; ID -11A; D-Pak (TO-252AA); PD 38W
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.28Ω; ID -8.8A; TO-252AA; PD 42W; VGS +/-20V
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