| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 10.0 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 10.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Input Capacitance | 910 pF |
| Gate Charge | 16.0 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 11.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FDS6690AS is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using Fairchild"s monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 16nC Typical low gate charge
Fairchild
11 Pages / 0.15 MByte
Fairchild
8 Pages / 0.72 MByte
Fairchild
Trans MOSFET N-CH 30V 10A 8Pin SOIC
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Trans MOSFET N-CH 30V 10A 8Pin SOIC T/R
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Trans MOSFET N-CH 30V 11A 8Pin SOIC T/R
Fairchild
Trans MOSFET N-CH 30V 10A 8Pin SOIC N T/R
Freescale
MOSFET N-CH 30V 11A 8-SOIC
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