TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 55V |
Continuous Drain Current (Ids) | 30A |
The IRFR4105ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
11 Pages / 0.32 MByte
Infineon
5 Pages / 0.1 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.045Ω; ID 27A; D-Pak (TO-252AA); PD 68W
International Rectifier
Trans MOSFET N-CH 55V 27A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.045Ω; ID 27A; D-Pak (TO-252AA); PD 68W
International Rectifier
Trans MOSFET N-CH 55V 30A 3Pin(2+Tab) DPAK Tube
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