TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | 60.0 V |
Current Rating | 15.0 A |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 60.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 30.0 W |
Drain to Source Voltage (Vds) | 60.0 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
Continuous Drain Current (Ids) | 15.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
●Product Highlights
●15A, 60V, R
●DS(on)
●= 0.06
●W
●@V
●GS
●= 10 V
●Low gate charge ( typical 11.5 nC)
●Low Crss ( typical 25 pF)
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
●175°C maximum junction temperature rating
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