| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 16A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRFR3910PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
● Advanced process technology
● Fast switching
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
Infineon
11 Pages / 0.38 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
International Rectifier
Trans MOSFET N-CH 100V 16A 3Pin (2+Tab) DPAK
IRF
Power MOSFET(Vdss=100V, Rds=0.115Ω, Id=16A)
International Rectifier
Trans MOSFET N-CH 100V 16A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.115Ω; ID 16A; D-Pak (TO-252AA); PD 79W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.115Ω; ID 16A; D-Pak (TO-252AA); PD 79W
International Rectifier
MOSFET N-CH 100V 16A DPAK
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