| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 57A |
The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
9 Pages / 0.22 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.03 MByte
Infineon
1 Pages / 0.12 MByte
IRF
Power MOSFET(Vdss=100V, Rds(on)=0.0.5W(1/2W), Id=57A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.025Ω; ID 57A; TO-247AC; PD 200W; VGS +/-20V
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