| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | QFN |
| Polarity | N-Channel |
| Power Dissipation | 3.10 W |
| Drain to Source Voltage (Vds) | 25.0 V |
| Continuous Drain Current (Ids) | 100 A |
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
● Optimized for 5V Gate Drive
● Ultralow Qg and Qgd
● Low Thermal Resistance
● Avalanche Rated
● Pb Free Terminal Plating
● RoHS Compliant
● Halogen Free
● SON 5-mm × 6-mm Plastic Package
● APPLICATIONS
● Point-of-Load Synchronous Buck in Networking,
●Telecom and Computing Systems
● Optimized for Synchronous FET Applications
●NexFET is a trademark of Texas Instruments.
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