| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 75.0 V |
| Current Rating | 209 A |
| Case/Package | TO-247-3 |
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Part Family | IRFP2907 |
| Drain to Source Voltage (Vds) | 75.0 V |
| Breakdown Voltage (Drain to Source) | 75.0 V |
| Continuous Drain Current (Ids) | 209 A |
| Rise Time | 190 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
●N-Channel Power MOSFET over 100A, Infineon
●The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
9 Pages / 0.22 MByte
International Rectifier
20 Pages / 2.6 MByte
IRF
HEXFET Power MOSFET Die in Wafer Form
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 209A; TO-247AC; PD 470W; -55de
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 170A; TO-247AC; PD 310W; -55de
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