| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 200V |
| Continuous Drain Current (Ids) | 50A |
The IRFP260MPBF is a HEXFET® fifth generation N-channel Power MOSFET utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
● Ease of paralleling
● Simple drive requirements
● Low static drain-to-source ON-resistance
Infineon
8 Pages / 0.62 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
IXYS Semiconductor
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AD
Vishay Semiconductor
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AC
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ω; ID 50A; TO-247AC; PD 300W; VGS +/-20V
International Rectifier
MOSFET N-CH 200V 50A TO-247AC
International Rectifier
Trans MOSFET N-CH 200V 50A 3Pin (3+Tab) TO-247AC
Major Brands
MOSFET IRFP260N TO-247AC N-Channel 200V 50A
International Rectifier
Trans MOSFET N-CH 200V 50A 3Pin(3+Tab) TO-247AC Tube
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