| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 200V |
| Continuous Drain Current (Ids) | 44A |
The IRFB42N20DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
9 Pages / 0.21 MByte
Infineon
20 Pages / 2.6 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.055Ω; ID 44A; TO-220AB; PD 330W; VGS +/-30V
International Rectifier
MOSFET N-CH 200V 44A TO-220AB
IRF
High frequency DC-DC converters
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