| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-262 |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 19A |
The IRF9Z34NLPBF is a P-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This low-profile through-hole transistor benefits, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Fast switching
● Fully avalanche rated
● Dynamic dv/dt rating
Infineon
11 Pages / 1.07 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.25 MByte
Infineon
1 Pages / 0.14 MByte
Vishay Semiconductor
Trans MOSFET P-CH 60V 18A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 60V 18A TO-220AB
International Rectifier
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.1Ω; ID -19A; TO-220AB; PD 68W; VGS +/-20V
International Rectifier
Trans MOSFET P-CH 55V 19A 3Pin(2+Tab) D2PAK Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
