DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• P-Channel
●• 175 °C Operating Temperature
●• Fast Switching
●• Ease of Paralleling
●• Simple Drive Requirements
●• Lead (Pb)-free Available
Kersemi Electronic
2.34 MByte
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.3Ω; ID -12A; TO-220AB; PD 88W; VGS +/-20V
Vishay Semiconductor
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
International Rectifier
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.2Ω; ID -14A; TO-220AB; PD 79W; VGS +/-20V
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