| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -100 V |
| Current Rating | -6.80 A |
| Case/Package | TO-220AB |
| Drain to Source Resistance (on) (Rds) | 480 mΩ (max) |
| Polarity | P-Channel |
| Power Dissipation | 48.0 W |
| Part Family | IRF9520N |
| Drain to Source Voltage (Vds) | -100 V |
| Breakdown Voltage (Drain to Source) | -100 V |
| Continuous Drain Current (Ids) | -6.80 A |
| Rise Time | 47.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●Advanced Process Technology
●Dynamic dv/dt Rating
●175°C Operating Temperature
●Fast Switching
●P-Channel
●Fully Avalanche Rated
International Rectifier
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