| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 10.8A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF7811AVPBF is a HEXFET® single N-channel Power MOSFET designed for vapour phase, infrared, convection or wave soldering techniques. This new device employs advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-to-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS (ON), gate charge and CdV/dt-induced turn-ON immunity. It offers an extremely low combination of Qsw and RDS (ON) for reduced losses in both control and synchronous FET applications. Power dissipation of greater than 2W is possible in a typical PCB mount application.
● Low conduction losses
● Low switching losses
● 100% Rg tested
● Fast switching
Infineon
6 Pages / 0.1 MByte
Infineon
6 Pages / 0.1 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
MOSFET N-CH 28V 14A 8-SOIC
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 11 Milliohms; ID 10.8A; SO-8; PD 2.5W; VGS +/-20
International Rectifier
Trans MOSFET N-CH 30V 10.8A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH 30V 14A 8Pin SOIC T/R
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