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IRF7811 Datasheet PDF

Part Series:IRF7811 Series
Category:MOSFETs
Description:SOIC N-CH 30V 10.8A
Document:IRF7811AVPBF Datasheet PDF (1 Pages)

IRF7811 MOSFETs Datasheet PDF

IRF7811AVPBF - Infineon Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC
Polarity
N-Channel
Drain to Source Voltage (Vds)
30V
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IRF7811AVPBF - Infineon Function Overview

The IRF7811AVPBF is a HEXFET® single N-channel Power MOSFET designed for vapour phase, infrared, convection or wave soldering techniques. This new device employs advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-to-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS (ON), gate charge and CdV/dt-induced turn-ON immunity. It offers an extremely low combination of Qsw and RDS (ON) for reduced losses in both control and synchronous FET applications. Power dissipation of greater than 2W is possible in a typical PCB mount application.
Low conduction losses
Low switching losses
100% Rg tested
Fast switching
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