| TYPE | DESCRIPTION |
|---|
| Case/Package | D2PAK |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
●extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and
●ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●l Advanced Process Technology
●l Surface Mount (IRF5305S)
●l Low-profile through-hole (IRF5305L)
●l 175°C Operating Temperature
●l Fast Switching
●l P-Channel
●l Fully Avalanche Rated
International Rectifier
0.16 MByte
Major Brands
Mosfet Irf5305 To-220Abp-Channel -55V
International Rectifier
P-Channel MOSFET, Vdss = -55V, Rds = 0.06Ω, Id = -31A, TO-220
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.06Ω, Id=-31A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ω; ID -31A; D2Pak; PD 110W; VGS +/-20V
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