| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 12.0 A |
| Case/Package | TO-220 |
| Polarity | NPN, N-Channel |
| Power Dissipation | 80.0 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The BDW93C is a 100V Silicon Epitaxial Base NPN Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● Complementary to the BDW94C
● Integrated anti-parallel collector-emitter diode
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
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