| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 110 A |
| Case/Package | TO-263 |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Part Family | IRF3205S |
| Input Capacitance | 3.25 nF |
| Gate Charge | 146 nC |
| Drain to Source Voltage (Vds) | 55.0 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 110 A |
| Rise Time | 101 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
●N-Channel Power MOSFET over 100A, Infineon
●The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
11 Pages / 0.59 MByte
International Rectifier
1 Pages / 0.42 MByte
International Rectifier
3 Pages / 0.06 MByte
International Rectifier
Trans MOSFET N-CH 55V 110A 3Pin (3+Tab) TO-220AB
Major Brands
Transistor IRF3205 TO-220 N Channel MOSFET
IRF
Power MOSFET(Vdss=55V, Rds(on)=8mohm, Id=110A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; D2Pak; PD 200W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 55V 110A 3Pin(2+Tab) D2PAK T/R
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