| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 110A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Dynamic dv/dt rating
● Fully avalanche rated
● Fast switching
● ±20V Gate-source voltage
Infineon
9 Pages / 0.09 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 55V 110A 3Pin (3+Tab) TO-220AB
Major Brands
Transistor IRF3205 TO-220 N Channel MOSFET
IRF
Power MOSFET(Vdss=55V, Rds(on)=8mohm, Id=110A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; D2Pak; PD 200W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 55V 110A 3Pin(2+Tab) D2PAK T/R
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