| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 40V |
| Continuous Drain Current (Ids) | 280A |
The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
● Advanced process technology
● Ultra-low ON-resistance
● Fast switching
● Repetitive avalanche allowed up to Tjmax
Infineon
12 Pages / 0.39 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
20 Pages / 0.94 MByte
Infineon
3 Pages / 0.12 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH Si 40V 280A 3Pin(3+Tab) TO-262 Tube
International Rectifier
Trans MOSFET N-CH 40V 280A 3Pin(2+Tab) D2PAK
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 1.8Milliohms; ID 280A; TO-220AB; PD 330W; -55de
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