| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 85A |
The IRF1010NPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
8 Pages / 0.22 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S
International Rectifier
Trans MOSFET N-CH 55V 85A 3Pin(2+Tab) D2PAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 6.8Milliohms; ID 84A; TO-220AB; PD 140W; -55deg
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