| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252 |
| Polarity | N-Channel |
| Power Dissipation | 83.0 W |
| Drain to Source Voltage (Vds) | 500V |
| Continuous Drain Current (Ids) | 9.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Cut Tape (CT) |
The IPD50R399CP is a CoolMOS™ N-channel Power MOSFET with ultra-low gate charge and high peak current capability.
● Lowest figure of merit Ron x Qg
● Extreme dV/dt rate
● Ultra low RDS (ON), very fast switching
● Very low internal Rg
● High peak current capability
● High power density and efficiency for superior power conversion systems
● Best-in-class performance ratio
● Qualified according to JEDEC for target applications
● Green device
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10 Pages / 0.73 MByte
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