| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3P-3, SC-65-3 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 120V |
| Continuous Collector Current | 8A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
STMicroelectronics has the solution to your circuit"s high-voltage requirements with their NPN 2STC4467 general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
ST Microelectronics
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