| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-220(NIS) |
| Polarity | N-Channel |
| Power Dissipation | 45.0 W |
| Rise Time | 40.0 ns |
High Power Switching Applications
●Fast Switching Applications
●• Fourth-generation IGBT
●• Enhancement mode type
●• Fast switching (FS): Operating frequency up to 50 kHz (reference)
● High speed: tf = 0.04 μs (typ.)
● Low switching loss : Eon = 0.40 mJ (typ.)
● : Eoff = 0.43 mJ (typ.)
●• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
●• FRD included between emitter and collector
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