| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Supply Voltage (DC) | 37.0 V (max) |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -12.0 A |
| Case/Package | TO-251 |
| Drain to Source Resistance (on) (Rds) | 135 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.50 W |
| Input Capacitance | 690 pF |
| Gate Charge | 21.0 nC |
| Drain to Source Voltage (Vds) | -60.0 V |
| Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
| Continuous Drain Current (Ids) | -12.0 A |
| Rise Time | 100 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
● Low gate charge
● 100% Avalanche tested
● Low crss (typical 80pF)
● ±25V Gate-source voltage
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Trans MOSFET P-CH 60V 12A 3Pin(3+Tab) IPAK Tube
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