| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Power Dissipation | 66.0 W |
| Drain to Source Voltage (Vds) | 80V |
| Continuous Drain Current (Ids) | 11A |
The BSC123N08NS3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
● Optimized technology for DC-to-DC converters
● Excellent gate charge x RDS (ON) product (FOM)
● Superior thermal resistance
● Dual sided cooling
● Low parasitic inductance
● Low profile
● Normal level
● 100% avalanche tested
● Qualified according to JEDEC for target applications
● Halogen-free, Green device
Infineon
9 Pages / 0.57 MByte
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5 Pages / 0.28 MByte
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7 Pages / 0.07 MByte
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Single N-Channel 80V 24mOhm 25NC 2.5W OptiMOS SMT Mosfet - TDSON-8
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