| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 35.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 11.6 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 39.0 W |
| Input Capacitance | 845 pF |
| Gate Charge | 18.0 nC |
| Drain to Source Voltage (Vds) | 25.0 V |
| Breakdown Voltage (Drain to Source) | 25.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 35.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDD8778 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low RDS (ON).
● Low gate charge
● Low gate resistant
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