| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 55.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 8.60 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 60.0 mW |
| Input Capacitance | 1.20 nF |
| Gate Charge | 21.0 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 55.0 A |
| Rise Time | 6.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDD6680AS is a SyncFET™ N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed to replace a single MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using Fairchild"s monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is indistinguishable from the performance in parallel with a Schottky diode.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 21nC Typical low gate charge
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