TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | -20.0 V |
Current Rating | -4.00 A |
Case/Package | SSOT |
Drain to Source Resistance (on) (Rds) | 65.0 mΩ |
Polarity | P-Channel |
Power Dissipation | 1.60 W |
Input Capacitance | 640 pF |
Gate Charge | 7.20 nC |
Drain to Source Voltage (Vds) | 20.0 V |
Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
Continuous Drain Current (Ids) | 4.00 A |
Rise Time | 19.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape |
The FDC642P is a 2.5V specified single P-channel MOSFET produced using Fairchild"s advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. It is suitable for use in load switch and battery protection application.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● 11nC Typical low gate charge
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